型号:

MSD1819A-RT1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS NPN GP BIPO 50V SOT-323
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
MSD1819A-RT1G PDF
产品变化通告 Copper Wire Change 19/May/2010
标准包装 3,000
系列 -
晶体管类型 NPN
电流 - 集电极 (Ic)(最大) 100mA
电压 - 集电极发射极击穿(最大) 50V
Ib、Ic条件下的Vce饱和度(最大) 500mV @ 10mA,100mA
电流 - 集电极截止(最大) 100nA
在某 Ic、Vce 时的最小直流电流增益 (hFE) 210 @ 2mA,10V
功率 - 最大 150mW
频率 - 转换 -
安装类型 表面贴装
封装/外壳 SC-70,SOT-323
供应商设备封装 SC-70-3(SOT323)
包装 带卷 (TR)
其它名称 MSD1819A-RT1G-ND
MSD1819A-RT1GOSTR
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